BD410 25/09/2012 comset semiconductors 1/3 05/11/2012 semiconductors npn epitaxila silicon power transistors they are silicon epitaxial planar npn power trans istors mounted in a to-126 plastic package. af-amplifier for high supply voltage they are intended for control circuit, vertical output stages in tvsets, and general purpose applications. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 325 v v ebo emitter-base voltage 5 v i c collector current 1 a i cm collector peak current 1.5 a p t total power dissipation t a =25c 1.25 w t c =25c 20 t j junction temperature -55 to +125 c t s storage temperature range -55 to +125 t l lead temperature 1.6 mm from case for 10 secondes 260
BD410 25/09/2012 comset semiconductors 2/3 05/11/2012 semiconductors electrical characteristics t c =25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter breakdown voltage (*) i c = 10 ma, i b = 0 325 - - v v cbo collector-base breakdown voltage i c = 0.5 ma, i e = 0 500 - - v v ebo collector-base breakdown voltage i e = 50 a, i c = 0 5 - - v i ces collector cutoff current v ce = 300 v, i b = 0 - - 100 a v ce(sat) collector-emitter saturation voltage (*) i c = 100 ma, i b = 10 ma - - 0.5 v v be base-emitter voltage (*) i c = 100 ma, i b = 10 ma - - 1.5 v h fe dc current gain (*) i c = 5 ma, v ce = 10 v 25 - - - i c = 50 ma, v ce = 10 v 30 - 240 i c = 100 ma, v ce = 10 v 20 - - switching times. symbol ratings test condition(s) min typ mx unit c obo output capacitance i e = 0, v cb = 10 v, f= 1 mhz - 5.5 - pf c ibo input capacitance i e = 0, v cb = 0.5 v, f= 1 mhz - 90 - (*) these parameters must be meas ured using pulse techniques, t p 300 s, duty cycle 2%
BD410 25/09/2012 comset semiconductors 3/3 05/11/2012 semiconductors mechanical data case to-126 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions min max a 7.4 7.8 b 10.5 10.8 c 2.4 2.7 d 0.7 0.9 e 2.25 typ. f 0.49 0.75 g 4.4 typ. l 15.7 typ. m 1.27 typ. n 3.75 typ. p 3.0 3.2 s 2.54 typ. pin 1 : emitter pin 2 : collector pin 3 : base
|
